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Dalton Transactions

A novel method for the synthesis of MoSSe using an (Et4N)2[Mo3S4Se3Br6] complex as the sole precursor†

Dang B. Tran,a   Ly T. Le,a   Duc N. Nguyen,a   Quyen T. Nguyen,a   Ta Thi Thuy Nga,bd   Wu-Ching Chou,b   Hoang H. Luc,c   Chung-Li Dong ORCID logo d  and  Phong D. Tran ORCID logo *a  

* Corresponding authors

a University of Science and Technology of Hanoi, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Hanoi, Vietnam
E-mail: tran-dinh.phong@usth.edu.vn

b Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu City 300093, Taiwan

c Institute of Natural Sciences, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi, Vietnam

d Research Center for X-ray Science & Department of Physics, Tamkang University, New Taipei City 25137, Taiwan

Abstract

MoSSe is a semiconducting material with a layered structure similar to MoS2 and MoSe2, which shows potential applications in optoelectronics, solar cells, sensing, and catalysis. Synthesis of this material with a controllable structure and chemical composition represents a great challenge. Herein, we report a new method for the synthesis of MoSSe by employing an [Et4N]2[Mo3S4Se3Br6] complex as the sole precursor. Thermal annealing of this complex under an Ar atmosphere at moderate temperatures ranging from 350 °C to 650 °C resulted in the formation of pure MoSSe. The morphology and structure of MoSSe were characterized using SEM, HRTEM, XRD, Raman spectroscopy, X-ray absorption near-edge structure (XANES) and extended X-ray absorption fine structure (EXAFS). The effects of annealing temperature on the structure of MoSSe were also examined.

Graphical abstract: A novel method for the synthesis of MoSSe using an (Et4N)2[Mo3S4Se3Br6] complex as the sole precursor

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Article information

DOI
https://doi.org/10.1039/D4DT02016B
Article type
Paper
Submitted
12 Jul 2024
Accepted
17 Aug 2024
First published
19 Aug 2024

Dalton Trans., 2024, Advance Article

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A novel method for the synthesis of MoSSe using an (Et4N)2[Mo3S4Se3Br6] complex as the sole precursor

D. B. Tran, L. T. Le, D. N. Nguyen, Q. T. Nguyen, T. T. T. Nga, W. Chou, H. H. Luc, C. Dong and P. D. Tran, Dalton Trans., 2024, Advance Article , DOI: 10.1039/D4DT02016B

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